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DF2S16FS - Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).

DF2S16FS_4125109.PDF Datasheet


Part No.	DF2S16FS
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	130.11K / 3 Page
Maker	Toshiba Corporation Toshiba Semiconductor
Homepage	http://www.semicon.toshiba.co.jp/eng/
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Full text search : Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).

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1N5946B 1N5924B 1N5925B 1N5956B 1N5913B 1N5938B 1N	1.5W SILICON ZENER DIODE 1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. -20% tolerance. 1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. -1% tolerance. 1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. -2% tolerance. 1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. -2% tolerance. 1.5 W, silicon zener diode. Zener voltage 5.1V. Test current 73.5 mA. -2% tolerance. 1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. -10% tolerance. 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. -10% tolerance. 1.5 W, silicon zener diode. Zener voltage 9.1V. Test current 41.2 mA. -1% tolerance. 1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. -10% tolerance. 1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. -20% tolerance. 1.5 W, silicon zener diode. Zener voltage 91 V. 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DF5A3.6CJE	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Diodes for Protecting against ESD Epitaxial Planar Type	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
DF3A8.2FV	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor

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